发明名称 |
Resist compositions for chemically amplified resists comprising a di(t-butyl)malonyl methyl side group in the base polymer |
摘要 |
A resist composition by which high resolution patterns can be formed in a lithography process, due to its high sensitivity to light and large difference in solubilities in a developing solution before and after exposure to light, and which has excellent thermal characteristics. The resist composition is suitable for manufacturing highly integrated semiconductor chips.
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申请公布号 |
US5733704(A) |
申请公布日期 |
1998.03.31 |
申请号 |
US19960705723 |
申请日期 |
1996.08.30 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHOI, SANG-JUN;PARK, CHUN-GEUN |
分类号 |
G03F7/004;G03F7/039;H01L21/027;(IPC1-7):G03F7/039 |
主分类号 |
G03F7/004 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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