| 摘要 |
PROBLEM TO BE SOLVED: To enhance flatness, high integration and acceleration by a method wherein a transistor is formed of the first electrode, the first and second impurity diffused regions while another transistor is formed of the second and fourth electrodes, the first and second semiconductor layers furthermore, the semiconductor region is formed into a channel region of the latter transistor. SOLUTION: A substrate MOSFET 30 is composed of a gate electrode 4, impurity diffused regions 5a, 5b. Next, the impurity diffused region 5b is connected to a semiconductor film 13b as a bit line so as to compose a TFT of a wiring 15 as an upper gate electrode, a plug 11 as a lower gate electrode and source.drain electrodes 18a, 18b. Next, the impurity diffused region 5a is electrically connected to the plug 11 so as to connect the wiring 15 to the gate electrode 4 as a word line. Finally, the gate electrode 4 is impressed with a voltage exceeding a threshold value to turn the MOSFET 30 on while another wiring 16 is impressed with a positive charge so as to supply a current from the impurity diffused layer 5b to 5a for the accumulation of the charge as the plug 11. |
