| 摘要 |
PROBLEM TO BE SOLVED: To enable an energy barrier located between an active layer and a clad layer to be enhanced in height to restrain electrons from overflowing the energy barrier, so as to improve an optical semiconductor device in the LD characteristics and operation characteristics especially at a high temperature by a method, wherein a second conductive-type superlattice barrier layer of specific superlattice structure is provided between the second conductive-type clad layer and the active layer. SOLUTION: A semiconductor active layer 3 is arranged between a first conductive-type clad layer 2 and a second conductive-type clad layer 4. A second conductivity-type superlattice barrier layer 10 of super-lattice structure, composed of one or more pairs of first chemical compound semiconductors 10a which are larger than the active layer 3 in band gap energy and second chemical compound semiconductors 1b which are each smaller in conduction band energy differenceΔEC but larger in valence band energy differenceΔEV than the first chemical compound semiconductor 10a is provided between the second conductivity-type clad layer 4 and the active layer 3, wherein the compound semiconductors 10a and 10b are alternately laminated to forma the second conductive-type superlattice barrier layer 10. For example, the first chemical compound semiconductor 10a is to be represented by a formula (Al0.7 Ga0.3 )0.5 In0.5 P, and the second chemical compound semiconductor 10b is to be represented by a formula, Al0.5 In0.5 P.
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