| 摘要 |
PROBLEM TO BE SOLVED: To enable a light-emitting diode to be lessened in chip area and enhanced in degree of integration by a method, wherein an anode electrode and a cathode electrode are provided to the front side and rear side of a conductive substrate respectively. SOLUTION: An n-type gallium nitride compound semiconductor buffer layer 5 is grown on the one primary surface of a conductive substrate 3. Then, an n-type gallium nitride compound semiconductor layer 7, a gallium nitride compound semiconductor layer 9, and a p-type gallium nitride compound semiconductor layer 11 are successively laminated thereon through an organometallic vapor growth method, a molecular beam epitaxy growth method or the like for the formation of a gallium nitride compound semiconductor light-emitting device 1. A current injection anode electrode 13 is formed on the p-type gallium nitride compound semiconductor layer 11, and a cathode electrode 15 is formed on the other primary surfaces of the conductive substrate 3. Therefore, two bonding wires are not required to be bonded on the same plane. By this setup, bonding wires can be bonded without taking bonding accuracy into consideration, and a semiconductor light-emitting diode of this constitution can be lessened in chip area and enhanced in degree of integration. |
