发明名称 |
Self-aligned magnetic clad write line and method thereof |
摘要 |
A self-aligned magnetic clad bit line structure ( 274 ) for a magnetic memory element ( 240 a) and its method of formation are disclosed, wherein the self-aligned magnetic clad bit line structure ( 274 ) extends within a trench ( 258 ) and includes a conductive material ( 264 ), magnetic cladding sidewalls ( 262 ) and a magnetic cladding cap ( 252 ). The magnetic cladding sidewalls ( 262 ) at least partially surround the conductive material ( 264 ) and the magnetic cladding cap ( 252 ) is substantially recessed within the trench with respect to the top of the trench. |
申请公布号 |
AU3069002(A) |
申请公布日期 |
2002.05.27 |
申请号 |
AU20020030690 |
申请日期 |
2001.11.08 |
申请人 |
MOTOROLA, INC., A CORPORATION OF THE STATE OF DELAWARE |
发明人 |
ROBERT E. JONES JR.;CAROLE C. BARRON;ERIC D. LUCKOWSKI;BRADLEY M. MELNICH |
分类号 |
H01L27/105;H01L21/8246;H01L27/22;H01L43/08 |
主分类号 |
H01L27/105 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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