| 摘要 |
PROBLEM TO BE SOLVED: To prevent variation in the characteristics of a transistor at the time of oxygen annealing. SOLUTION: In a semiconductor device where a capacitor comprising a ferroelectric film is integrated on a semiconductor substrate where an active element is formed, at least an insulating film principally comprising SiN is formed between the active element, e.g. a transistor, formed on the semiconductor substrate and the ferroelectric capacitor.
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