| 摘要 |
PROBLEM TO BE SOLVED: To provide a method which facilitates the control of the shape of etching and prevents a deposit from being generated in an etching of a III-VI compound semiconductor, specially an MgXZn1- XSYSe1- Y (0<=X<1, 0<=Y<1). SOLUTION: An etching liquid at the time of an etching of a II-VI compound semiconductor 102 is composed of water hydrogen peroxide, ammonia water and a chelate reagent, such as an ethylenediamineterascetic acid. At the chelate reagent links up easily with group II element cations generated by decomposing with hydrogen peroxide, the production of a deposit consisting of a group II element oxide or the like is impeded. Accordingly, in an etching of an MgXZn1- XSYSe1- Y (0<=X<1, 0<=Y<1), a deposit is not generated and a control of the shape of etching is facilitated. |
