发明名称
摘要 <p>PURPOSE:To continuously, safely and conveniently treat a nitrogen fluoride- contg. waste gas for a long time without by-producing a highly toxic gas such as oxygen difluoride by bringing the gas into contact with boron nitride at a specified temp. CONSTITUTION:The waste gas contg. the nitrogen fluoride of the used nitrogen trifluoride necessary for the production of a VLSI, etc., is brought into contact with boron nitride at 100-600 deg.C or preferably at 200-400 deg.C. The waste gas is then brought into contact with water, an aq. alkaline soln. and an aq. mineral acid soln. to remove the contained nitrogen fluoride. The nitrogen fluoride in the waste gas is rendered harmless extremely efficiently and economically in this way.</p>
申请公布号 JP2728926(B2) 申请公布日期 1998.03.18
申请号 JP19890066409 申请日期 1989.03.20
申请人 MITSUI KAGAKU KK 发明人 IWANAGA TOKUYUKI;HARADA ISAO;ARITSUKA MAKOTO
分类号 B01D53/46;B01D53/34;B01D53/54;B01D53/68;(IPC1-7):B01D53/68 主分类号 B01D53/46
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