METHOD AND APPARATUS FOR FORMING OXYNITRIDE FILM AND NITRIDE FILM, OXYNITRIDE FILM, NITRIDE FILM AND BASE MATERIAL

摘要

Uniform oxynitride and nitride films can be formed by low-temperature and high-speed nitriding reaction not dependent on the nitriding time or nitriding temperature. A solid dielectric is provided on at least one of opposed surfaces of a pair of electrodes opposed to each other under a pressure of 300 (Torr) or higher, a nitrogen gas containing an oxide equal to or lower than 0.2% is introduced into a space between the pair of opposed electrodes, an electric field is applied to the nitrogen gas, and the resulting N 2 (2 nd p.s.) or N 2 (H.I.R) active species is brought into contact with an object to be processed to form an oxynitride film/nitride film on a surface of the object to be processed.