| 摘要 |
A semiconductor device having a power MOSFET. The power MOSFET has a plurality of FET cells formed over a semiconductor substrate, has gate electrodes of the respective FET cells connected to one another, and has a gate electrode pad, for connection to an external terminal, formed over the semiconductor substrate through an insulating film. The gate electrode pad is arranged so as to extend over the FET cells through an insulating film. |
