| 摘要 |
PROBLEM TO BE SOLVED: To emit light efficiently to the outside by forming a GaAsP epitaxial layer such that a GaP substrate directs upward, thereby spreading the flow of an current applied over the entire PN junction face. SOLUTION: An N-type GaAs1-x Px (0.45<x<1) epitaxial layer 2 is formed on a GaP substrate 1 and an N-type GaAs1-x Px (0.45<x<1) epitaxial layer 3 is formed thereon. P-type impurities, i.e., Zn, are then diffused to form a P-type GaAs1-x Px (0.45<x<1) epitaxial layer 3 and a PN-junction 4. Subsequently, a roughened surface 5 is formed by lapping and etching, and upper and lower electrodes 6, 7 are formed thereon. Consequently, an current applied spreads entirely over the PN-junction 4. An emitted light spreads efficiently to the GaP substrate 1 side and since the blocking ratio of the upper electrode 6 is decreased, a large quantity of light is outputted. |
