| 摘要 |
<p>PROBLEM TO BE SOLVED: To enable realizing an offset structure without much increasing the number of processes by forming a second insulating film on the side wall of a gate electrode, doping a silicon thin film by using the gate electrode and the second insulating film as masks, and forming source/drain regions. SOLUTION: Patterns 602, 603 of silicon thin films are formed on an insulating substrate 601 of glass or the like. A pattern 604 which is in contact with the upper sides of both of the patterns and connects them is formed. The entire body is covered with an gate-insulating film 605, on which a gate electrode 606 is formed. After an insulating film 507 is formed on the entire body, an insulating film 607 is left only on the side wall of the gate electrode 606 by anisotropic etching. Next, ion implantation is performed, and a source region 508 and a drain region 509 are formed in the self-aligning manner. At this time, the silicon thin film 607 left on the gate side wall is turned into a stopper, so that a transistor having an offset structure is formed.</p> |
