FACE-DOWN BONDING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To perform face-down bonding firmly on a supporting substrate, by using, together with a wiring pillar formed of a conductive substance, a supporting pillar of a height almost equal to a wiring pillar provided at a position except for a connection terminal on the surface of a semiconductor substrate. SOLUTION: On the surface of a dielectric substrate 2 formed of ceramic, glass or semiconductor, a monolithic microwave integrated circuit(MMIC) 1 formed on a compound semiconductor substrate is bonded face-down through a pillar 3. On the surface of the dielectric substrate 2, a signal wiring 6, a power source wiring 7, etc., are formed, and the wiring pillar 3 is connected to the wirings. At the same times, multiple supporting pillars 4 are assigned at a position which is not a connection terminal of the MMIC1, and the supporting pillar 4 also connects the MMIC1 to the dielectric substrate 2.