| 摘要 |
PROBLEM TO BE SOLVED: To generate an electromagnetic wave, without applying field externally by arranging a semiconductor quantum well in a semiconductor resonator and generating a piezoelectric field in the semiconductor quantum well. SOLUTION: GaAs layers 12 and AlGaAs layers 13 are formed alternately on a GaAs substrate 11 to form a distributed Bragg reflection resonator (resonator) 16, and then a resonator 15 comprising an InGaAs quantum well layer 14, the GaAs layers 12 and the AlGaAs layers 13 is formed. The InGaAs quantum well layer 14 constitutes a quantum well structure, along with the GaAs layers 12 on the opposite sides thereof. When it is irradiated with a pumping incident laser light 17, a piezoelectric field is generated in the semiconductor quantum structure. Wave functions for electrons and holes, constituting excitons generated through absorption of the pumping incident laser light 17, are polarized by the piezoelectric field in the InGaAs quantum well layer 14 for constituting an electric multipole and an electromagnetic wave 18 is radiated without external application of field. |
