Optoelektronische Schaltvorrichtung mit Quantentopf-Struktur und stimulierter Emission

摘要

A semiconductor-insulator-semiconductor (SIS) structure diode (10) device for providing fast optoelectronic switching with stimulated emission. The device includes a substrate (12) which has a buffer layer (14) disposed on top thereof. An n-type cladding layer (16) is disposed on top of the buffer layer. An undoped i-region (18,20,22,24,26) is disposed on top of the buffer layer. The i-region includes at least one quantum well (20,22) disposed between two waveguide layers (18,26). A lightly doped p-type cladding layer (28) is disposed on top of the i-region. A contact layer (30) is further disposed on top of the p-type cladding layer. First and second contact terminals (36,38) are included for providing a two-terminal device. The diode advantageously provides good lasing performance, significant negative differential resistance and strong light sensitivity. In an alternate embodiment, a third terminal is connected to the undoped i-region to thereby form a three terminal device.