Switching component with front and rear side semiconductor substrate

摘要

The first transistor has a first region adjacent to the substrate front side, a second region in the first one, and at least and island region adjacent to the substrate rear side. The second transistor comprises the semiconductor substrate and three regions, with the third one coupled to the island region. Pref. the first region and the semiconductor substrate form an intrinsic diode, parallel to the two transistors. The diode operation may be blocked by a fourth region adjacent to the third one and the island region.