发明名称 |
METHOD FOR CURING SPIN-ON-GLASS FILM UTILIZING ELECTRON BEAM RADIATION |
摘要 |
<p>An electron beam exposure method is described which provides a means of curing spin-on-glass formed on a semiconductor wafer which insulates the conductive metal layer and planarizes the topography in the process of manufacturing multilayered integrated circuits. The method utilizes a large area, uniform electron beam exposure system in a soft vacuum environment. A wafer coated with uncured siloxane spin-on-glass is irradiated with electrons of sufficient energy to penetrate the entire thickness of the spin-on-glass and is simultaneously heated by infrared heaters. The wafer is exposed to a predetermined dose of electrons while simultaneously raised to a peak temperature in a soft vacuum environment. The electron beam and infrared heaters are then extinguished and the substrate cooled before removing from vacuum.</p> |
申请公布号 |
EP0826235(A2) |
申请公布日期 |
1998.03.04 |
申请号 |
EP19960927989 |
申请日期 |
1996.05.08 |
申请人 |
ALLIEDSIGNAL INC. |
发明人 |
LIVESAY, WILLIAM, R.;ROSS, MATTHEW, F.;RUBIALES, ANTHONY, L. |
分类号 |
H01L21/31;H01L21/027;H01L21/3105;H01L21/312;H01L21/316;(IPC1-7):H01L21/316;H01L21/310;H01L21/48 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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