发明名称 METHOD FOR CURING SPIN-ON-GLASS FILM UTILIZING ELECTRON BEAM RADIATION
摘要 <p>An electron beam exposure method is described which provides a means of curing spin-on-glass formed on a semiconductor wafer which insulates the conductive metal layer and planarizes the topography in the process of manufacturing multilayered integrated circuits. The method utilizes a large area, uniform electron beam exposure system in a soft vacuum environment. A wafer coated with uncured siloxane spin-on-glass is irradiated with electrons of sufficient energy to penetrate the entire thickness of the spin-on-glass and is simultaneously heated by infrared heaters. The wafer is exposed to a predetermined dose of electrons while simultaneously raised to a peak temperature in a soft vacuum environment. The electron beam and infrared heaters are then extinguished and the substrate cooled before removing from vacuum.</p>
申请公布号 EP0826235(A2) 申请公布日期 1998.03.04
申请号 EP19960927989 申请日期 1996.05.08
申请人 ALLIEDSIGNAL INC. 发明人 LIVESAY, WILLIAM, R.;ROSS, MATTHEW, F.;RUBIALES, ANTHONY, L.
分类号 H01L21/31;H01L21/027;H01L21/3105;H01L21/312;H01L21/316;(IPC1-7):H01L21/316;H01L21/310;H01L21/48 主分类号 H01L21/31
代理机构 代理人
主权项
地址