| 摘要 |
<p>PURPOSE:To improve the yield and working efficiency of an X-ray absorbing body forming process by performing annealing after an organic film is formed and a substrate is back-etched, and then, forming a resist pattern. CONSTITUTION:After a supporting film 12 is formed on a substrate 11, an organic film 13 is applied to the surface of the film 12. The substrate 11 is back-etched and a resist which is different from that used for the film 13 is applied. Then a resist pattern 15 is formed by drawing the pattern with an electron beam or by irradiating the substrate with X rays or ultraviolet rays after the substrate 11 is back-etched. After the pattern of an X-ray absorbing body is formed to a desired shape, the organic film is removed. Because of the organic film, the process resisting property of the inorganic film 12 used as a supporting film having an extremely thin thickness and X-ray transmissive property is improved and, by performing annealing at 100-500 deg.C after back- etching the substrate, release of the tensile stress of the inorganic film used as a supporting film is accelerated. The positional deviation of the X-ray absorbing body having a desired shape from a desired position can be suppressed to <=1/10 of the minimum line width and the yield of the X-ray absorbing body forming process is improved.</p> |
