发明名称 |
Non-volatile programmable memory having an SRAM capability |
摘要 |
A computer system includes a computing device such as a microcontroller and a memory device. The memory device is illustrtively a serial device connected to the serail port of the microcontrollerThe memory device includes a page latch load circuit which provides serial I/O to the microcontroller and transfers I/O bits in a predetermined order to/from the page latches. Page latches are connected over many bit lines to a memory cell array. The page latches not only supports programming and reading of sectors in the memory cell array, but also provides one or more of the following functions: directly accessable to the microcontroller as an SRAM scratch pad, directly loadable from the memory cell array to facilitate single byte "read-modify-write" operations, and loadable during programming operations to support real time applications.
|
申请公布号 |
US5724303(A) |
申请公布日期 |
1998.03.03 |
申请号 |
US19960601963 |
申请日期 |
1996.02.15 |
申请人 |
NEXCOM TECHNOLOGY, INC. |
发明人 |
GANNAGE, MICHAEL E.;WONG, DAVID K.;BAJWA, ASIM A. |
分类号 |
G11C7/00;G11C16/10;(IPC1-7):G11C7/00 |
主分类号 |
G11C7/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|