发明名称 Non-volatile programmable memory having an SRAM capability
摘要 A computer system includes a computing device such as a microcontroller and a memory device. The memory device is illustrtively a serial device connected to the serail port of the microcontrollerThe memory device includes a page latch load circuit which provides serial I/O to the microcontroller and transfers I/O bits in a predetermined order to/from the page latches. Page latches are connected over many bit lines to a memory cell array. The page latches not only supports programming and reading of sectors in the memory cell array, but also provides one or more of the following functions: directly accessable to the microcontroller as an SRAM scratch pad, directly loadable from the memory cell array to facilitate single byte "read-modify-write" operations, and loadable during programming operations to support real time applications.
申请公布号 US5724303(A) 申请公布日期 1998.03.03
申请号 US19960601963 申请日期 1996.02.15
申请人 NEXCOM TECHNOLOGY, INC. 发明人 GANNAGE, MICHAEL E.;WONG, DAVID K.;BAJWA, ASIM A.
分类号 G11C7/00;G11C16/10;(IPC1-7):G11C7/00 主分类号 G11C7/00
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