发明名称 |
Method and apparatus for forming very small scale Cu interconnect metallurgy on semiconductor substrates |
摘要 |
A self contained unit for forming Cu metallurgy interconnection structures on SC substrates. The unit has an enclosed chamber with a plurality of apparatus for performing wet processes, including electroless metal plating and planarization. The unit provides a way of reducing the number of times the wafer is transferred between the wet process steps that require less environmental cleanliness and dry very clean processes steps.
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申请公布号 |
US5723387(A) |
申请公布日期 |
1998.03.03 |
申请号 |
US19960684714 |
申请日期 |
1996.07.22 |
申请人 |
INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE |
发明人 |
CHEN, LAI-JUH |
分类号 |
H01L21/00;H01L21/768;(IPC1-7):H01L21/00 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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