发明名称 Method and apparatus for forming very small scale Cu interconnect metallurgy on semiconductor substrates
摘要 A self contained unit for forming Cu metallurgy interconnection structures on SC substrates. The unit has an enclosed chamber with a plurality of apparatus for performing wet processes, including electroless metal plating and planarization. The unit provides a way of reducing the number of times the wafer is transferred between the wet process steps that require less environmental cleanliness and dry very clean processes steps.
申请公布号 US5723387(A) 申请公布日期 1998.03.03
申请号 US19960684714 申请日期 1996.07.22
申请人 INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE 发明人 CHEN, LAI-JUH
分类号 H01L21/00;H01L21/768;(IPC1-7):H01L21/00 主分类号 H01L21/00
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