| 摘要 |
A semiconductor device has a multi-stage power amplifier, which is composed of an input stage transistor (100a;200a) having an input terminal and an output stage transistor (100b,200b) having an output terminal. The input stage transistor and output stage transistor are disposed on the same chip in such a way that the input terminal (1a) of the input stage transistor is arranged in a direction opposite to that of an input terminal (1b) of the output stage transistor. A ground metallization layer (5) is formed on a back and a side surface and on an outside perimeter section of a front surface of the chip and a ground terminal (2a,2b) of each transistor is connected to the ground metallization layer. Each of the input stage transistor (100a;200a) and the output stage transistor (100b) comprises a gate pad (1a;1b), a source pad (2a;2b), a drain pad (3a;3b) and an active region (4a) which are formed on a semi-insulating substrate (10). The gate pad (1a;1b), the source pad (2a;2b) and the drain pad (3a;3b) are in contact respectively with a gate, a source and a drain electrode formed in the active region (4a). All transistors constituting an ultra-high frequency multi-stage power amplifier are implemented onto a single chip, thus enhancing device miniaturization and preventing undesirable oscillation. <IMAGE> |
