| 摘要 |
PROBLEM TO BE SOLVED: To produce uniform silicon-base fine particles capable of easily forming a thin film by adopting an in-gas evaporation method in combination with a blocking agent introducing technique. SOLUTION: Silicon is melted by heating in inert gas and evaporated by further heating. Evaporated silicon atoms are converted into fine particles by impinging against molecules of the inert gas and the unbonded bonding radicals of the resultant fine silicon particles are allowed to react with a blocking agent represented by the formula R-H [where R is F, Cl, Br, I, Cn H2n+1 -C=CH-CH2 X, Cn H2n+1 -CH-CH2 -CH2 X or Cn H2n+1 -C=CHX (X is F, Cl, Br or I) and n>=1] before the radical deactivate. |
