| 摘要 |
A silicon substrate production process involves: (a) forming a gettering sorption film (2) on the back face of a silicon substrate (1); (b) implanting oxygen ions (3) into the substrate front face at a substrate temperature of 400-700 deg C; (c) removing the sorption film; and (d) heat treating the substrate at /-1300 deg C to react the oxygen with the silicon to form a silicon oxide film in the substrate. Also claimed are similar processes, in which the silicon substrate (1) is heat treated at 500-1000 deg C between steps (b) and (c) and optionally a second gettering sorption film is formed at least on the substrate back face between steps (c) and (d).
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