| 发明名称 |
Semiconductor device with an indium-tin-oxide in contact with a semiconductor or metal |
| 摘要 |
A semiconductor device has an ITO film which is in contact with a semiconductor or a metal, the ITO film having an insulating film with SiN as the main constituent provided on or under at least a portion of the ITO film.
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| 申请公布号 |
US5714790(A) |
申请公布日期 |
1998.02.03 |
| 申请号 |
US19960635213 |
申请日期 |
1996.04.17 |
| 申请人 |
CANON KABUSHIKI KAISHA |
发明人 |
SAKAMOTO, MASARU |
| 分类号 |
G02F1/1343;G02F1/136;G02F1/1368;H01L21/318;H01L29/45;H01L29/78;H01L29/786;H01L31/0224;(IPC1-7):H01L29/04;H01L31/062 |
主分类号 |
G02F1/1343 |
| 代理机构 |
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代理人 |
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| 主权项 |
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