| 摘要 |
PURPOSE: To provide a high frequency semiconductor device in which the high frequency characteristics can be measured accurately without assembling a chip. CONSTITUTION: On the major surface of a semiinsulating GaAs substrate 4, an input matching circuit 1 and an output matching circuit 2 are formed integrally on the input and output sides of an FET 3 and surface ground electrodes 5 are arranged on the opposite sides of a strip line at the input and output ends. A strip line surface electrode 7 is located in the center of the surface ground electrodes 5 connected electrically with a strip line rear electrode 8 through a V-groove 6. When the impedance of a chip is measured at the input and output ends, the chip is not required to be assembled using a bonding wire and the impedance can be measured from the surface side using a high frequency prober, for example, under the state of wafer or chip. |
