| 摘要 |
PROBLEM TO BE SOLVED: To improve the uniformity of the film thickness and compsn., crystallinity, and material efficiency by feeding a raw material gas from below a substrate and specifying a substrate holding method, hydrogen partial pressure of a carrier gas and III-V compd. semiconductor layer to be grown. SOLUTION: A raw material gas is fed from below a substrate 1, the substrate 1 is mounted on a susceptor 2, so that the angle between the normal to the substrate surface in the crystal growing direction and horizontal plane is 0-90 downwards, i.e., the normal to the substrate surface is directed either horizontally or downwards from the horizontal. For growing a III-V compd. semiconductor layer expressed by a general formula of Inx Gay Alx N (0<x<=1, 0<=y<1, 0<<=z<1, x+y+z=1), a carrier gas having a hydrogen partial pressure of 0.1atm. or less, e.g. N, Ar, He, etc., or mixture thereof is used. |
