发明名称 SEMICONDUCTOR SWITCH CIRCUIT
摘要 <p>PROBLEM TO BE SOLVED: To keep a sufficient isolation characteristic by eliminating the effect of a parasitic inductive component, even in the case that a high-frequency signal whose frequency is higher is an object of the circuit. SOLUTION: In the semiconductor switch circuit having a 1st FET 3 connected between input output terminals 1, 2 and a 2nd FET 7 conductively connected to the circuit when the 1st FET 3 is nonconductive, a capacitive element 15 in series resonance to an inductive component 14 in existence between a source of the 2nd FET 7 and a ground terminal 6 is connected between them. Thus, an excellent isolation characteristic is obtained by causing series resonance to the circuit for a frequency band of about 1.5GHZ, so as to reduce the impedance between the 2nd FET 7 and the ground. Furthermore, the inductive component 14 is set to a desired value by adjusting the inductance of bonding wires or lead frames of an IC chip.</p>
申请公布号 JPH1013204(A) 申请公布日期 1998.01.16
申请号 JP19960185556 申请日期 1996.06.25
申请人 NEW JAPAN RADIO CO LTD 发明人 IKENAKA KAZUNARI
分类号 H01L21/822;H01L27/04;H01L29/80;H03K17/687;(IPC1-7):H03K17/687 主分类号 H01L21/822
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