METHOD OF CLEANING SEMICONDUCTOR DEVICE

摘要

Cleaning solution containing a mixture of 24 wt.% of sulfuric acid, 5 wt.% of hydrogen peroxide, 0.02 wt.% of hydrofluoric acid, 0.075 wt.% of n-dodecylbenzene sulfonic acid and water is stored in a treatment bath (1) made of quartz and heated to a temperature not higher than 100 DEG C by a heater (2). A silicon wafer (3) is dipped in the cleaning solution for 10 minutes and then washed with pure water for about 7 minutes. The surfaces of particles are etched by hydrofluoric acid and the n-dodecylbenzene sulfonic acid is bonded to the surfaces by sulfate bonding. Then, the apparent diameters of the particles are increased, the repulsive forces by zeta potentials, etc., are relatively increased and hence it is difficult for particles to adhere to the surface of the wafer (3). Therefore, the particles can be washed away easily by a washing process.