发明名称 SEMICONDUCTOR STORAGE DEVICE AND ITS MANUFACTURE
摘要 PROBLEM TO BE SOLVED: To improve reliability without deteriorating electric characteristics of a capacitor insulating film, by constituting an upper electrode by using a laminated film composed of a first conductor layer constituted of thin film conductor having film pressure transmitting water content on the surface of an insulating film, and a second conductor layer being in contact with the first conductor layer. SOLUTION: A capacitor is constituted of a lower Pb electrode film 108, a Pb(Zr,Ti)O3 insulating film 109, a first upper Pb electrode film 110 and a second upper Pb electrode film 111. In order to restrain diffusion of Pt from the lower Pt electrode film 108 to a poly Si plug 106, the capacitor is electrically connected with the poly Si plug 106 via a barrier TiN film 107. In order to eliminate sticking water on an interface between the Pb(Zr,Ti)O3 insulating film 109 and the first upper Pt electrode film 110, after the first upper Pt electrode film 110 is deposited, the first upper Pt electrode film 110 is thinned. Thereby reliability is improved without deteriorating high permitivity and ferroelectric characteristics of an insulating material.
申请公布号 JPH1012844(A) 申请公布日期 1998.01.16
申请号 JP19960166527 申请日期 1996.06.27
申请人 HITACHI LTD 发明人 KUMIHASHI KOSEI;GOTO YASUSHI;TORII KAZUNARI;YOKOYAMA NATSUKI;KURE TOKUO
分类号 H01L21/285;H01L21/28;H01L21/316;H01L21/324;H01L21/822;H01L21/8242;H01L27/04;H01L27/108 主分类号 H01L21/285
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