| 摘要 |
PROBLEM TO BE SOLVED: To improve the reliability of a semiconductor laser under high output oscillation in a strain quantum well semiconductor laser 0.90-1.1μm. SOLUTION: An n-Inx4 Ga1-x4 As1-y4 Py4 clad layer 3, an Inx3 Ga1-x As1-y Py light guide layer 4, an Inx2 Ga1-x2 As1-y Py tension strain barrier layer 5, an Inx1 Ga1-x As1-y Py compression strain active layer 6, an Inx2 Ga1-x As1-y Py tension strain barrier layer 7, an p-Inx3 Ga1-x3 As1-y3 Py3 light guide layer 8, an p-Inx4 Ga1-x4 As1-y4 Py4 clad layer 9 and an p-GaAs contact layer 10 are successively grown on an n-GaAs substrate 2. In such a constitution, the barrier layers 5, 7 have the tension strain of the strain amount compensating the compression strain of the active layer 6. Furthermore, the clad layer 3, 9 and the light guide layers 4, 8 are composed to be lattice-matched with the substrate 2.
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