发明名称 PELTIER ELEMENT
摘要 PROBLEM TO BE SOLVED: To reduce the thermal stress generated in a semiconductor which constitutes a Peltier element by a method wherein two semiconductors are alternately connected between substrates through each conductor formed on the surface opposing to a pair of substrates, and either of the conductors or both conductors are formed on the substrate through an elastic thin film. SOLUTION: The second ceramic substrate 2 is arranged opposing to the first ceramic substrate 1, and an elastic thin film 7 of about 30μm or smaller in thickness, for example, is formed on the opposing surface of the ceramic substrates 1 and 2. Polyimide resin, etc., is used for the elastic thin film 7. The first conductor 3 and the second conductor 4, consisted of copper foil, are formed on the opposing surface of the first and the second ceramic substrate 1 and 2 through an elastic thin film 7. Between the first and the second ceramic substrates 1 and 2, an n-type semiconductor (the first semiconductor) 5 such as bismuth and tellurium, for example, and a p-type semiconductor (the second semiconductor) 6 such as bismuth and tellurium are alternately connected by soldering through conductors 3 and 4.
申请公布号 JPH104219(A) 申请公布日期 1998.01.06
申请号 JP19960155235 申请日期 1996.06.17
申请人 SONY CORP 发明人 YAMANAKA HIROFUMI
分类号 H01L35/16;H01L35/32;(IPC1-7):H01L35/32 主分类号 H01L35/16
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