| 摘要 |
PROBLEM TO BE SOLVED: To keep a PN junction constant in contact area so as to make a semiconductor device operate stably even if a PN junction is small in contact area, by a method wherein a P<+> -type body contact diffusion layer and an N<+> - type source region are provided inside a semiconductor substrate adjacent to its surface, and a contact/wiring metal layer is jointed to their upsides. SOLUTION: P<+> -type body contact diffusion layers 102 disposed in separating from each other by a prescribed distance are provided inside a P-type substrate 101 adjacent to its surface and along a channel region. An N<+> -type source region 103 is formed in one piece with the body contact diffusion layers 102 coming into close contact with all their peripheries. Furthermore, contact/wiring metal layers 104 each joined to the upsides of the two adjacent P<+> -type body contact diffusion layers 102 and the N<+> -type source region 103 between the adjacent body contact diffusion layers 102 are provided. By this setup, even if a P-type region and an N-type region are not accurately coincident with each other to form a contact and deviate from each other in contact forming position on a substrate, a PN junction can be kept constant in contact area. |
