发明名称 Multi-bit data output buffer for semiconductor memory device
摘要 A multi-bit data output buffer for a semiconductor memory device, comprising a data input circuit for inputting at least two bit data, at least two bit data buffering circuits, each of at least two bit data buffering circuits buffering a corresponding one of at least two bit data from the data input circuit, and a bit data comparison circuit for controlling the amounts of current flowing to at least two bit data buffering circuits according to logic values of at least two bit data from the data input circuit. According to the present invention, the multi-bit data output buffer is capable of minimizing the generation of noise in the output data and enhancing a response speed of the output data with respect to the input data.
申请公布号 US5703812(A) 申请公布日期 1997.12.30
申请号 US19960674160 申请日期 1996.07.01
申请人 HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. 发明人 RYU, MYUNG SUN
分类号 G11C7/00;G11C7/10;H03K19/003;(IPC1-7):G11C7/00 主分类号 G11C7/00
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