| 摘要 |
A phase shift mask in which an edge angle of a phase shifter ranges within 90 DEG +/- 20 DEG is used as a reticle in a step of forming a resist pattern, so that an exposure pattern applied to a resist is formed in a light intensity distribution having a light intensity contrast kept at constant level. Therefore, a fine resist pattern having a predetermined width at the wavelength level of light or less can be provided with high dimensional precision and high reproductivity under the constant developing conditions. In addition, there is provided on the side wall of the phase shifter of the phase shift mask a light shielding film which, due to its width, can not be resolved as an exposure pattern in itself, so that a region in which the light intensity is reduced from the constant level can be formed corresponding to the width of the light shielding film in the exposure pattern whose image is formed by the projection lens. Therefore, a fine resist pattern having a predetermined width at the wavelength level of light or less can be formed with high dimensional precision and high reproductivity under the constant developing conditions. As a result, a semiconductor device of high performance in which fine processing is performed can be manufactured on a high yield. <IMAGE> |
