AUTOMATIC EXPOSURE METHOD USING THE RETICLE FOR SEMICONDUCTOR FABRICATION

摘要

The first step is to set a point to measure a reflection ratio by identifying an alignment mark formed in a scribe line of a reticle. The second step is to detect a reflection ratio of a pattern formed in the scribe line and then to determine whether the reflection ratio is out of a predetermined reflection ration or not. The third step is to perform the exposure after set an exposure time corresponding to the reflection ratio measured according to the determination of the second step. The fourth step is to sequentially measure the reflection ratio for a wafer sequentially loaded into a exposure equipment according to the point ate at the first step and then to perform a exposing process for a set time after setting a exposing time according to the measured reflection ratio.