| 摘要 |
PROBLEM TO BE SOLVED: To suppress the increase of a leak current resulting from the current application time at a high temperature by a method in which an oxygen pore is provided in a dielectric thin film, and the dielectric thin film is composed of titanium, strontium and oxide material containing lanthanium. SOLUTION: In this dielectric thin film capacitor element, a silicon thermally oxidized film 2, a Ti adhesive layer 3, a Pt lower electrode layer 4, a dielectric thin film 5 consisting of oxide material containing titanium, strontium and lanthanium, and a Pt upper electrode layer 6 are successively formed on an n-type silicon substrate 1. SrTiO3 powder or S+TiO3 powder and BaTiO3 powder are sufficiently mixed until the density of La in an STO thin film or a BSTO thin film becomes the desired density, the mixture is sintered, and the obtained material is used as the sputtering target of a dielectric. As a result, a dielectric thin film capacitor element, having the insulating property which hardly deteriorates even when it is used at a high temperature for 1000 hours under application of DC voltage, can be obtained. |
