FORMATION OF LOW DIELECTRIC-CONSTANT SILICON OXIDE INSULATING FILM AND SEMICONDUCTOR DEVICE USING IT,申请号JP19960152563-传众专利搜索

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发明名称	FORMATION OF LOW DIELECTRIC-CONSTANT SILICON OXIDE INSULATING FILM AND SEMICONDUCTOR DEVICE USING IT
摘要
申请公布号	JPH09330925(A)	申请公布日期	1997.12.22
申请号	JP19960152563	申请日期	1996.06.13
申请人	SONY CORP	发明人	SATO JUNICHI
分类号	H01L21/31;H01L21/316;H01L21/768;H01L23/522;(IPC1-7):H01L21/316	主分类号	H01L21/31
代理机构		代理人
主权项
地址

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