| 摘要 |
PROBLEM TO BE SOLVED: To reduce the influence of resistance variation of a high resistance load device due to the potential variation of bit lines by forming a layer insulation film from a laminate of insulation films including a dielectric film having a higher dielectric const. than that of silicon oxide. SOLUTION: High dielectric const. films 28 and 26 are formed on an upper and lower layers of a second layer insulation film 25 which includes the silicon nitride films 26, 28 formed on a lower layer of a second wiring layer 22 (ground lines 51) and lower layer of resistance elements 31. This enhances the field effect of the ground lines 51 formed with the second wiring layer 22 located on a lower layer of the resistance elements 31, thus reducing the field effect of bit lines 39 formed with a fourth wiring layer. Thus the influence of the potential change of the bit line 39 on the resistance elements 31. In an HR type SRAM the potential variation of the bit lines 39 is hence removed to result in an invariant resistance characteristic of the resistance element 31. |
