| 摘要 |
A method of fabricating a transistor includes the steps of depositing a first sacrificial oxide layer and first silicon oxide layer on a semiconductor substrate and forming a silicon oxide layer pattern, forming a polysilicon spacer on the sides of the silicon oxide layer pattern, implanting p-type impurities in a high concentration into the substrate using the silicon oxide layer pattern and polysilicon spacer as a mask, removing all layers formed on the substrate, forming a second sacrificial oxide layer pattern and second silicon oxide layer pattern on the substrate, depositing a gate insulating layer thereon and planarizing the substrate using a polysilicon layer, performing etchback to remove the gate oxide layer formed on the second silicon oxide layer pattern to form a gate polysilicon pattern to be gate electrode, removing the gate oxide layer, second silicon oxide pattern and second sacrificial oxide pattern formed on the sides of the gate polysilicon pattern, forming a lightly doped n-type impurity region in a predetermined portion of the substrate, forming an oxide spacer on the sides of the gate electrode, and forming a source and drain in a predetermined portion of the substrate.
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