| 摘要 |
A fabrication method of semiconductor memory device having high capacitance of capacitor is provided to improve the oxidation tolerance of silicon nitride film. The method comprises the steps of: forming an interlayer insulator(5) on a semiconductor substrate(100) having transistors; forming a nitride film(9) having tolerance to oxidation; forming a contact hole to expose source and drain regions(S/D) of transistor by selectively etching the nitrride film(9) and the interlayer insulator(5); forming a storage node by etching a conductive layer(6); and forming a dielectric layer(7) and a plate electrode(8). Thereby, it is possible to increase the capacitance by forming the nitride film having tolerance to oxidation under the dielectric layer of capacitor.
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