Flash memory cell, electronic device comprising such a cell, and relative fabrication method

摘要

The device includes flash-EEPROM memory cells (80), circuit transistors (81, 82) and high-voltage transistors (83, 84); and a layer of salicide, i.e. self-aligned titanium silicide, is formed on and contacting the source and drain regions of the cells (80) and transistors (81-84) and on and contacting the control gate regions of the cells and the gate regions of the transistors. The salicide, which reduces the series resistance of the transistors and so improves performance of the circuit portion, in no way impairs the electric characteristics, reliability or cycling characteristics of the cells, thus enabling the formation of mixed devices with a high-performance logic portion and a high storage capacity.