发明名称 |
Method of forming thin silicon oxide film with high dielectric breakdown and hot carrier resistance |
摘要 |
A method of forming a silicon oxide film by setting a silicon wafer in a chamber capable of introducing oxidizing gas and being evacuated and by heating the silicon wafer in an oxidizing atmosphere. The method includes the steps of: transporting the silicon wafer into the chamber without contacting the silicon wafer with air; introducing an ozone containing gas into the chamber and setting the interior of the chamber to a predetermined pressure; and heating the silicon wafer to a predetermined temperature and oxidizing the surface of the silicon wafer. The predetermined pressure is preferably between 200 Torr and 0.1 Torr. Ozone may be generated from oxygen by applying ultraviolet rays to the upper space of a silicon wafer. The temperature of ozone to be introduced is preferably low. It is preferable to incorporate infrared heating in order not to excessively heat ozone and to heat a silicon wafer to a high temperature.
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申请公布号 |
US5693578(A) |
申请公布日期 |
1997.12.02 |
申请号 |
US19960606681 |
申请日期 |
1996.02.26 |
申请人 |
FUJITSU, LTD. |
发明人 |
NAKANISHI, TOSHIRO;SATO, YASUHISA;OKUNO, MASAKI |
分类号 |
H01L21/316;H01L21/306;H01L29/78;(IPC1-7):H01L21/02 |
主分类号 |
H01L21/316 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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