| 摘要 |
PROBLEM TO BE SOLVED: To form a polycrystal silicon thin film having (111) orientation with a large grain diameter on the surface of a substrate. SOLUTION: On the surface of a substrate 2, an amorphous or crystallite silicon thin film 4 is formed and laser beams are applied on the surface to form a polycrystal silicon seed layer 5 having (111) orientation. Then, a polycrystal silicon deposited layer 6 having (111) orientation is formed by accumulating silicon atoms or silicon compound molecules, while applying energy beams on the surface of the seed layer 5. The polycrystal silicon thin film 3 having (111) orientation has less defects and is formed for a desired thickness with large diameter grains by such a manufacturing method. The polycrystal silicon thin film 3 with a large grain diameter with less defects can be used, for instance, for a highly efficient light carrier generating layer of a silicon solar cell. |
