发明名称 HIGH FREQUENCY CONNECTOR
摘要 PROBLEM TO BE SOLVED: To provide a high frequency connector which can be constructed at a low cost, exhibits good endurance against environment, and can suppress generation of inter modulation distortion by subjecting a non-magnetic parent material to electroless plating with a Ni alloy containing P, and thereby forming a housing or a center conductor. SOLUTION: A center conductor 2 is installed in a housing 1 as an external conductor where an insulative material 3 is interposed, and thereby a high frequency connector is constructed. The housing 1 or the center conductor 2 is formed from a parent material which consists of a non-magnetic substance having a high tensile strength such as beryllium copper and is covered with a electroless plated film of P-containing Ni alloy. This electroless plated film should favorably contain P in an amount more than 5wt.% of Ni. The P- containing Ni alloy film exhibits a high endurance against environment and a magnetic permeability as low as approx. 1.0 at 1GHz. Accordingly there is no drop in the skin depth due to the permeability, and the current concentration to the facial layer is relieved to lead to suppression of the mutual modulative distortion.
申请公布号 JPH09306605(A) 申请公布日期 1997.11.28
申请号 JP19960119928 申请日期 1996.05.15
申请人 MURATA MFG CO LTD 发明人 ANDO MASAMICHI;KUBO HIROYUKI
分类号 H01R13/03;(IPC1-7):H01R17/12;H01R17/04 主分类号 H01R13/03
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