| 摘要 |
PROBLEM TO BE SOLVED: To provide a Schottky barrier semiconductor device wherein the withstand voltage of the backward direction characteristics is large and the voltage drop in the forward direction is small, and its manufacturing method. SOLUTION: In this Schottky barrier semiconductor device, a metal layer 3 which forms Schottky junction is arranged on the surface of a semiconductor layer 2, and a guard ring 4 of a rigion whose conductivity type is different from the conductivity type of the semiconductor layer 2 is formed on an upper layer part of the semiconductor layer 2 on the periphery of the metal layer 3. Inside the guard ring 4, a recessed part is formed on the semiconductor layer 2 to be isolated from the guard ring 4, and a metal layer 3 is formed on the surface of the recessed part. |
