| 摘要 |
The invention provides a magnetoresistance effects film including at least two thin magnetic films (3, 4) deposited on a substrate (5), at least one thin nonmagnetic film (1) interposed between the magnetic films (3, 4), and a thin antiferromagnetic film (6) disposed adjacent to one (3) of the magnetic films (3, 4). A bias magnetic field of one (3) of the thin magnetic films induced by the antiferromagnetic film (6) has an intensity Hr greater than a coercivity HC2 of the magnetic film (4). The invention is characterized by that the antiferromagnetic film (6) has a superlattice structure composed of at least two of NiO, NixCo1-xO (x=0.1-0.9) and CoO, and that a ratio of Ni relative to Co in the number of atoms in the superlattice structure is set equal to or greater than 1.0. The magnetoresistance effects film exhibits large linear change in resistance with the hysteresis being small even in a small external field. <IMAGE> |
