发明名称 |
Semiconductor device including protection means |
摘要 |
<p>A high voltage DENMOS transistor (10) having improved ESD protection. The transistor (10) is optimized to provide maximum substrate current in order to turn on the inherent lateral npn transistor during an ESD event so that the lateral npn can dissipate the ESD event without damage to the transistor (10). This is accomplished by optimizing the overlap (A) of the drain extended region (16) and the gate electrode (28) to control the gate coupling to achieve maximum substrate current. <IMAGE></p> |
申请公布号 |
EP0807977(A2) |
申请公布日期 |
1997.11.19 |
申请号 |
EP19970303309 |
申请日期 |
1997.05.15 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
DUVVURY, CHARVAKA;BRIGGS, DAVID DOUGLAS;CARVAJAL, FERNANDO DAVID |
分类号 |
H01L27/04;H01L21/822;H01L27/02;H01L27/07;(IPC1-7):H01L27/02 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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