发明名称 Microwave plasma deposition source and method of filling high aspect-ratio features on a substrate
摘要 A microwave plasma deposition source including a vacuum chamber for containing a substance to be energized in a plasma with microwave energy, a coaxial microwave feed ending in the chamber, a sputter target in the chamber and electrically isolated from the coaxial feed, and a second substrate spaced from the sputter target for defining a plasma volume between the substrates.
申请公布号 US5688382(A) 申请公布日期 1997.11.18
申请号 US19950521958 申请日期 1995.08.31
申请人 APPLIED SCIENCE AND TECHNOLOGY, INC. 发明人 BESEN, MATTHEW M.;BOURGET, LAWRENCE;HOLBER, WILLIAM M.;SMITH, DONALD K.;POST, RICHARD S.
分类号 H05H1/46;C23C14/06;C23C14/34;C23C14/35;C23C16/511;C23F4/00;H01J37/32;(IPC1-7):C23C14/34 主分类号 H05H1/46
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