发明名称 |
Microwave plasma deposition source and method of filling high aspect-ratio features on a substrate |
摘要 |
A microwave plasma deposition source including a vacuum chamber for containing a substance to be energized in a plasma with microwave energy, a coaxial microwave feed ending in the chamber, a sputter target in the chamber and electrically isolated from the coaxial feed, and a second substrate spaced from the sputter target for defining a plasma volume between the substrates.
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申请公布号 |
US5688382(A) |
申请公布日期 |
1997.11.18 |
申请号 |
US19950521958 |
申请日期 |
1995.08.31 |
申请人 |
APPLIED SCIENCE AND TECHNOLOGY, INC. |
发明人 |
BESEN, MATTHEW M.;BOURGET, LAWRENCE;HOLBER, WILLIAM M.;SMITH, DONALD K.;POST, RICHARD S. |
分类号 |
H05H1/46;C23C14/06;C23C14/34;C23C14/35;C23C16/511;C23F4/00;H01J37/32;(IPC1-7):C23C14/34 |
主分类号 |
H05H1/46 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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