BANK VON SCHMELZSICHERUNGEN MIT ESD-SCHUTZ

摘要

The fuse bank has a fuse-link (2), insulated from a substrate (1) incorporating a guard ring provided by a doped semiconductor region (5). An insulation zone (7) separates the guard ring from a second doped semiconductor region (6) of similar conductivity type, the guard ring coupled to a first supply potential (VDD),via a high-ohmic semiconductor element and the second doped semiconductor region coupled directly to a second supply potential (VSS). Pref. the high-ohmic semiconductor element is provided by a lightly-doped-drain transistor, which acts as a current limiting element.