METHOD FOR FABRICATING A FINE CONTACT HOLE

摘要

The first step is to form a lower insulation layer on a semiconductor substrate and then sequentially deposit a doped polysilicon film and an undoped polysilicon film with a constant thickness on the substrate. The second step is to form a photoresist pattern on the undoped polysilicon film. The third step is to form an undoped polysilicon film pattern and a doped polysilicon film pattern by sequentially etching the undoped polysilicon film and the doped polysilicon film by using the photoresist as a mask. The fourth step is to remove the photoresist pattern and etch the side of the doped polysilicon film pattern. The fifth step is to coat the photoresist. The sixth step is to remove the undoped polysilicon film pattern and the doped polysilicon film pattern and to form a contact hall which expose the semiconductor substrate by etching the lower insulation layer using the photoresist as a mask.